| PART |
Description |
Maker |
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| M68701M 68701M |
Silicon MOS FET Power Amplifier, 860-915MHz 6W FM /Digital Mobile
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CD411230 CD411630 |
Dual Diode 30 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK Modules(30 Amperes/1200-1600 Volts) 30 A, 1200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| VSKT320 VSKD250-04 VSKD250-08 VSKD250-12 VSKD250-1 |
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
320 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 800 V, SILICON, RECTIFIER DIODE
320 A, 400 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
250 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 800 V, SILICON, RECTIFIER DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| ISL9R18120G2NL ISL9R18120P2NL |
18A, 1200V Stealt Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
18A, 1200V Stealth Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Fairchild Semiconductor, Corp.
|
| ME601615 ME601215 |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) 3 PHASE, 150 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM75DU-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| VSKJ270-08 VSKJ270-16 VSKE270-20 VSKC320-12 VSKJ32 |
DIODE 270 A, 800 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
DIODE 270 A, 1600 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
DIODE 320 A, 1200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
DIODE 250 A, 400 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
DIODE 250 A, 1200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-2, Rectifier Diode
DIODE 270 A, 1200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
|
Vishay Semiconductors
Vishay Siliconix
|
| SML20EUZ12BCR3 |
20 A, 1200 V, SILICON, RECTIFIER DIODE
|
SEMELAB LTD
|
| STTA812G-TR |
8 A, 1200 V, SILICON, RECTIFIER DIODE
|
STMICROELECTRONICS
|
|
